Hrubčín, L. : rechercher sur Z-Library

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1

Shallow p+n junction silicon nuclear radiation detectors

J. Dobrovodský, I. Bešše', L. Hrubčín, P. Kováč

Journal:

Sensors and Actuators A: Physical

Année:

1994

Langue:

english

Fichier:

PDF, 333 KB

english, 1994

2

Annular transmission surface-barrier detector

Ladislav Hrubčin, Arnošt Guldan

Journal:

Sensors and Actuators

Année:

1986

Langue:

english

Fichier:

PDF, 613 KB

english, 1986

3

Characteristics of Si and SiC detectors at registration of Xe ions

Hrubčín, L., Gurov, Yu.B., Zaťko, B., Mitrofanov, S.V., Rozov, S.V., Sedlačková, K., Sandukovsky, V.G., Semin, V.A., Nečas, V., Skuratov, V.A.

Journal:

Journal of Instrumentation

Année:

2018

Langue:

english

Fichier:

PDF, 1000 KB

english, 2018

4

Properties of amorphous silicon carbide films prepared by PECVD

J Huran, L Hrubcin, AP Kobzev, J Liday

Journal:

Année:

1996

Langue:

english

Fichier:

PDF, 227 KB

english, 1996

5

Effect of Proton Bombardment on the Dark Current of GaAs MSM Structures

L. Hrubčín, J. Šafránková, P. Hudek

Journal:

physica status solidi (a)

Année:

1992

Langue:

english

Fichier:

PDF, 176 KB

english, 1992

6

Current-voltage characteristics and charge DLTS spectra of proton-bombarded Schottky diodes on semi-insulating GaAs

I. Thurzo, L. Hrubčín, J. Bartoš, E. Pinčík

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1993

Langue:

english

Fichier:

PDF, 691 KB

english, 1993

7

Application of the ERD method for hydrogen determination in silicon (oxy) nitride thin films prepared by ECR plasma deposition

L. Hrubčín, J. Huran, R. Šandrik, A.P. Kobzev, D.M. Shirokov

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1994

Langue:

english

Fichier:

PDF, 345 KB

english, 1994

8

Method for producing via-connections in semiconductor wafers using a combination of plasma and chemical etching

Guldan, A., Hrubcin, L., Kubek, J., Tykva, R.

Journal:

IEEE Transactions on Electron Devices

Année:

1983

Langue:

english

Fichier:

PDF, 347 KB

english, 1983

9

Transmission photocathodes based on stainless steel mesh coated with deuterated diamond like carbon films

Huran, J., Balalykin, N.I., Feshchenko, A.A., Kobzev, A.P., Kleinová, A., Sasinková, V., Hrubčín, L.

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Année:

2014

Langue:

english

Fichier:

PDF, 528 KB

english, 2014

10

Characteristics of silicon carbide detectors

Gurov, Yu. B., Rozov, S. V., Sandukovsky, V. G., Yakushev, E. A., Hrubcin, L., Zat’ko, B.

Journal:

Instruments and Experimental Techniques

Année:

2015

Langue:

english

Fichier:

PDF, 157 KB

english, 2015

11

Neutron-irradiation effect on the electrical characteristics of amorphous silicon carbide and nitrogen-doped silicon carbide films prepared by PECVD technology

Huran, Jozef, Boháček, Pavol, Shvetsov, Valery N., Kobzev, Alexander P., Kleinová, Angela, Borzakov, Sergey B., Hrubčín, Ladislav, Sekáčová, Mária, Balalykin, Nikolay I.

Journal:

physica status solidi (a)

Année:

2013

Langue:

english

Fichier:

PDF, 570 KB

english, 2013

12

[IEEE 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2016.11.13-2016.11.16)] 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Particle detectors based on 4H-SiC epitaxial layer and their properties

Zat'ko, B., Hrubcin, L., Sagatova, A., Bohacek, P., Dubecky, F., Sedlackova, K., Sekacova, M., Arbet, J., Necas, V., Skuratov, V. A.

Année:

2016

Langue:

english

Fichier:

PDF, 309 KB

english, 2016

13

[IEEE 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2016.11.13-2016.11.16)] 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Silicon carbide thin films deposited by PECVD technology for applications in photoelectrochemical water splitting devices

Huran, J., Bohacek, P., Sasinkova, V., Kleinova, A., Mikolasek, M., Kobzev, A.P., Hrubcin, L., Arbet, J., Sekacova, M.

Année:

2016

Fichier:

PDF, 379 KB

2016

14

Influnce of exposure with Xe radiation on heterojunction solar cell a-SiC/c-Si studied by impedance spectroscopy

Perný, M, Šály, V, Packa, J, Mikolášek, M, Váry, M, Huran, J, Hrubčín, L, Skuratov, V A, Arbet, J

Journal:

Journal of Physics Conference Series

Année:

2017

Langue:

english

Fichier:

PDF, 419 KB

english, 2017

15

Schottky barrier detectors based on high quality 4H-SiC semiconductor: electrical and detection properties

Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Zápražný, Z., Sedlačková, K., Sekáčová, M., Dubecký, F., Skuratov, V.A., Korytár, D., Nečas, V.

Journal:

Applied Surface Science

Année:

2018

Langue:

english

Fichier:

PDF, 997 KB

english, 2018

16

A Study of the Radiation Hardness of Si and SiC Detectors Using a Xe Ion Beam

Hrubčín, L., Gurov, Yu. B., Zaťko, B., Ivanov, O. M., Mitrofanov, S. V., Rozov, S. V., Sandukovsky, V. G., Semin, V. A., Skuratov, V. A.

Journal:

Instruments and Experimental Techniques

Année:

2018

Langue:

english

Fichier:

PDF, 332 KB

english, 2018

17

AIP Conference Proceedings [AIP Publishing APPLIED PHYSICS OF CONDENSED MATTER (APCOM 2019) - Strbske Pleso, Slovak Republic (19–21 June 2019)] APPLIED PHYSICS OF CONDENSED MATTER (APCOM 2019) - Electrical properties of detector Schottky diodes based on 4H-SiC high quality epitaxial layer

Zaťko, Bohumír, Hrubčín, Ladislav, Boháček, Pavol, Osvald, Jozef, Šagátová, Andrea, Sekáčová, Mária, Kováčová, Eva, Nečas, Vladimír

Année:

2019

Langue:

english

Fichier:

PDF, 1.63 MB

english, 2019